Highly selective, highly anisotropic, notch‐free, and charge‐buildup damage‐free silicon
etching is performed using electron cyclotron resonance (ECR) Cl 2 plasma modulated at a …

Charge build‐up on a substrate is greatly reduced by using a pulse‐time modulated electron
cyclotron resonance generated plasma of more than 50 μs with 600 kHz radio frequency (…

We evaluated the silicon nitride (SiN) etching characteristics of Ar/O 2/hydrofluorocarbon
plasma. Ar/CH 3 F/O 2 plasma achieved a high etching selectivity of SiN to SiO 2 by increasing …

UV radiation during plasma processing affects the surface of materials. Nevertheless, the
interaction of UV photons with surface is not clearly understood because of the difficulty in …

The mechanism of CO 2 plasma ashing process was evaluated. CO 2 plasma is a good
candidate for the ashing process for photoresists because it generates a lot of CO 2 ions. These …

A two-dimensional simulation of dc magnetron discharge is performed by a hybrid of fluid and
particle models. In this hybrid model, ions and bulk electrons are treated by the fluid model …

A feasibility study was done for 45-nm-node Cu interconnects using a novel molecular-pore-stacking
(MPS) SiOCH film (k = 2.45), taking electron scattering in the scaled-down Cu lines …

The present study aimed to develop a photochemically stabilized formulation of dacarbazine
[5-(3,3-dimethyl-1-triazeno)imidazole-4-carboxamide; DTIC] for reducing the production of …

Low-damage hard-mask (HM) plasma-etching technology for porous SiOCH film (k=2.6)
has been developed for robust 65-nm-node Cu dual damascene interconnects (DDIs). No …

The feasibility of etching Cu/low-k interconnects by using a low global warming potential CF
3 I plasma was studied. Low-damage etching was done and porous SiOC (⁠ p-Si OC⁠, k< …