A randomized controlled trial of radiofrequency ablation with ethanol injection for small hepatocellular carcinoma

…, T Teratani, S Obi, S Sato, R Tateishi, T Fujishima… - Gastroenterology, 2005 - Elsevier
Background & Aims: Percutaneous radiofrequency ablation is a recently introduced treatment
for hepatocellular carcinoma, whereas ethanol injection is now a standard therapy. We …

Percutaneous radiofrequency ablation for hepatocellular carcinoma: an analysis of 1000 cases

…, T Fujishima, H Yoshida, T Kawabe… - … Journal of the …, 2005 - Wiley Online Library
BACKGROUND Radiofrequency ablation (RFA) was introduced recently as a therapeutic
modality for hepatocellular carcinoma (HCC), an alternative to percutaneous ethanol injection …

Proposal of a new prognostic model for hepatocellular carcinoma: an analysis of 403 patients

…, T Teratani, S Obi, S Sato, Y Koike, T Fujishima… - Gut, 2005 - gut.bmj.com
Background: The prognosis of hepatocellular carcinoma (HCC) is highly dependent on
tumour extension and liver function. Recently, two new prognostic scoring systems—the CLIP …

Serum surfactant proteins A and D as prognostic factors in idiopathic pulmonary fibrosis and their relationship to disease extent

H Takahashi, T Fujishima, H Koba… - American journal of …, 2000 - atsjournals.org
Idiopathic pulmonary fibrosis (IPF) is a progressive, life-threatening, interstitial lung disease
of unknown etiology. For optimal therapeutic management of IPF an accurate tool is required …

Vertical GaN-based trench gate metal oxide semiconductor field-effect transistors on GaN bulk substrates

…, K Chikamatsu, A Yamaguchi, T Fujishima… - Applied physics …, 2008 - iopscience.iop.org
Completely vertical trench gate metal oxide semiconductor field-effect transistors (MOSFETs)
have been produced using gallium nitride (GaN) for the first time. These MOSFETs …

GaN-on-Si vertical Schottky and pn diodes

…, X Zhang, T Fujishima, T Palacios - IEEE electron device …, 2014 - ieeexplore.ieee.org
This letter demonstrates GaN vertical Schottky and pn diodes on Si substrates for the first
time. With a total GaN drift layer of only 1.5- $\mu{\rm m}$ thick, a breakdown voltage (BV) of …

Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors

…, HS Lee, F Gao, T Fujishima, T Palacios - … on Electron Devices, 2013 - ieeexplore.ieee.org
In this paper, we present self-consistent electrothermal simulations of single-finger and
multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and lateral …

Selective oxidation of liquid hydrocarbons over photoirradiated TiO2 pillared clays

KI Shimizu, T Kaneko, T Fujishima, T Kodama… - Applied Catalysis A …, 2002 - Elsevier
Selective photo-oxidation of benzene and cyclohexane were investigated by using TiO 2
pillared clays (mica, montmorillonite and saponite). The characterization results indicated that …

Purification and Properties of a New Enzyme, l-Glutamate Oxidase, from Streptomyces sp. X-119-6 Grown on Wheat Bran

H Kusakabe, Y Midorikawa, T Fujishima… - Agricultural and …, 1983 - Taylor & Francis
A new flavoprotein enzyme, l-glutamate oxidase, was purified to homogeneity from an
aqueous extract of a wheat bran culture of Streptomyces sp. Xl 19–6. It showed absorption …

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

…, M Sun, SJ Joglekar, T Fujishima, T Palacios - Applied Physics …, 2013 - pubs.aip.org
This paper demonstrates the compensation of the intrinsic positive charges in Al2O3 gate
dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (…